دیتاشیت NCE65TF068T
مشخصات دیتاشیت
| نام دیتاشیت |
NCE65TF068T
|
| حجم فایل |
78.575
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Wuxi NCE Power Semiconductor NCE65TF068T
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
435W
-
Total Gate Charge (Qg@Vgs):
65nC@10V
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
4.07nF@100V
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Continuous Drain Current (Id):
53A
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Gate Threshold Voltage (Vgs(th)@Id):
3.5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
2.2pF@100V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
62mΩ@10V,27A
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Package:
TO-247
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Manufacturer:
Wuxi NCE Power Semiconductor
